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Germanium outperforms silicon in energy efficient transistors with n und p conduction Technische Universität Dresden
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Germanium outperforms silicon in energy efficient transistors with n und p conduction Date: February 3, 2017 Source: Technische Universität Dresden
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Georgia Tech/IBM team demonstrates first 500 GHz silicongermanium transistors Halfterahertz performance. Georgia Institute of Technology
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